| 摘要 |
<p>PROBLEM TO BE SOLVED: To make optimization as circuits by depositing an insulator film covering gate electrodes and wiring and subjecting this film to anisotropic etching, thereby forming side walls on the flanks of the gate electrodes and wiring. SOLUTION: The gate electrode 105 and the gate wiring 106 are formed and the insulator film 110 is formed to cover the gate electrode 105 and the gate wiring 106. The formed insulator is etched by anisotropic etching preferentially in the direction approximately perpendicular to the substrate. Consequently, the insulators (side walls) 111, 112 of an approximately triangular shape are left on the flanks of the gate electrodes and wiring. High-density impurity doping is thereafter executed with the side walls 111, 112 as a doping mask, by which sources/drains 114 are formed. Since the doping is not executed in the region under the side walls, low-density drain(LDD) regions 113 are formed.</p> |
