| 摘要 |
PROBLEM TO BE SOLVED: To obtain ITO sputtering target scarcely producing nodule (black projection) in which a problem of nodule occurrence in ITO sputtering target is fundamentally solved. SOLUTION: This ITO sputtering target has >=95% relative density, <=6 μm average pore diameter and <=6 μm average Sn aggregation part size, and in the sputtering target, X-ray diffraction integrated intensity of phase having diffraction face with 1.78-1.81 Åspacing and/or 1.53-1.55 Å spacing in Sn aggregation part is >=2% based on X-ray diffraction integrated intensity corresponding to In2 O3 phase (222) face. |
