Integrated electronic circuit manufacturing method, e.g. for CMOS BiCMOS

摘要

The method involves forming an insulation groove (7a,7b,7c) in the region of a main surface of a substrate (1). The grooves insulate adjacent active elements in the substrate. An insulation material is then applied. The insulating material (9) is etched away down to the substrate in at least one region (13) from at least an insulation groove. Next, in regions in which the insulation material is etched away, second insulation grooves (14) are formed by selectively etching away the substrate. Finally these insulation grooves are filled with an electrically insulating material (15).