| 发明名称 |
Photoresist composition effective for use as an ion etch barrier after patterning |
| 摘要 |
<p>A photosensitive photoresist material which is effective for use as an ion etch barrier layer after patterning. The photoresist composition includes the reaction product of a compound having the general formula R1-COO-(CH2)n-O-R2 and a silylating agent.</p> |
| 申请公布号 |
EP0919874(A2) |
申请公布日期 |
1999.06.02 |
| 申请号 |
EP19980120628 |
申请日期 |
1998.11.02 |
| 申请人 |
TRW INC. |
发明人 |
TRAN, DEAN;JONES, WILLIAM L.;ROGERS, HARVEY N. |
| 分类号 |
G03F7/075;H01L21/027;(IPC1-7):G03F7/075 |
主分类号 |
G03F7/075 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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