发明名称 |
Fabrication method for reduced-dimension FET devices |
摘要 |
Pre-amorphization of a surface layer of crystalline silicon to an ultra-shallow (e.g., less than 100 nm) depth provides a solution to fabrication problems including (1) high thermal conduction in crystalline silicon and (2) shadowing and diffraction-interference effects by an already fabricated gate of a field-effect transistor on incident laser radiation. Such problems, in the past, have prevented prior-art projection gas immersion laser doping from being effectively employed in the fabrication of integrated circuits comprising MOS field-effect transistors employing 100 nm and shallower junction technology.
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申请公布号 |
US5908307(A) |
申请公布日期 |
1999.06.01 |
申请号 |
US19970792107 |
申请日期 |
1997.01.31 |
申请人 |
ULTRATECH STEPPER, INC. |
发明人 |
TALWAR, SOMIT;KRAMER, KARL-JOSEF;VERMA, GUARAV;WEINER, KURT |
分类号 |
H01L29/78;H01L21/225;H01L21/265;H01L21/336;H01L21/8238;H01L27/092;H01L29/08;(IPC1-7):H01L21/823 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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