THIN-FILM SILICON PHOTOELECTRIC CONVERTING DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a thin-film crystalline silicon photoelectric converting device, wherein an excellent semiconductor junction can be formed and photoelectric converting characteristics can be improved. SOLUTION: A thin-film silicon photoelectric converting device contains a thin-film crystalline silicon photoelectric converting layer 3 and a microscopic crystal silicon conductive thin film layer 4 containing a conductivity determinant impurity atom of 0.01 atomic % or more, formed by coming into contact with the photoelectric converting layer through a semiconductor junction interface. The rate of interfacial region having an angle of deviation of 15 deg. or less of the equivalent crystal orientational axis corresponding to both sides of junction interface is in the range of 5 to 50%.