| 摘要 |
PROBLEM TO BE SOLVED: To provide an SRAM cell structure which can increase the level of integration and which is advantageous for low-power and low-voltage operation, and a method of manufacture thereof. SOLUTION: A substrate region is divided into an N-well region NW and a P-well region PW through a trench 41, and first and second active regions 42 and 43 are formed symmetrically across the trench 41 in regions NW and PW, respectively. In the P-well region PW, third and fourth active regions 44 and 45 are formed symmetrically apart from the second active region 43. Then, first and second gate lines 31 and 32, which cross the first active region 42, the well trench 41 and the second active region 43, and a third gate line 33 which crosses the third and the fourth active regions 44 and 45 are formed. |
