| 摘要 |
PROBLEM TO BE SOLVED: To eliminate flaking at the time of etching a developed photoresist material layer, by uniformly implanting an implanting material of a prescribed dose quantity to the cured photoresist material layer, and then etching the unmasked region of a semiconductor wafer substrate. SOLUTION: After coating the substrate surface of a semiconductor wafer with a photoresist material layer (S1), it is exposed and developed by masking the photoresist layer, and the pattern of the photoresist material layer is formed (S2). Then, the developed and patterned photoresist material layer is cured and the pattern of the photoresist material layer is cured (S4). After uniformly implanting an implanting material of a prescribed dose quantity to the cured photoresist material layer (S10), the unmasked region of the semiconductor wafer substrate is etched (S5). Thus, the productivity of the semiconductor is improved and mixing of contaminating fine particles during semiconductor device manufacturing process can be reduced. |
