SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF

摘要

This invention relates to a high voltage semiconductor device such as a gate turn-off thyristor, reduces surface field concentration of a main P-N junction part and attains withstand voltage increase. In a semiconductor device which has a first conductivity type low-resistance layer (2), a first conductivity type high-resistance layer (1) arranged adjacently to the low-resistance layer (2) and a second conductivity type low-resistance layer (3) arranged adjacently to the first conductivity type high-resistance layer (1) to hold the first conductivity type high-resistance layer (1) with the first conductivity type low-resistance layer (2) and is formed in a plate shape while its outer periphery is so bevelled that sectional area increases from the first conductivity type low-resistance layer (2) toward the first conductivity type high-resistance layer (1) and from the second conductivity type low-resistance layer (3) toward the first conductivity type high-resistance layer (1) respectively, chamfers (10, 12) or boundary surfaces of a prescribed radius of curvature were formed on boundary parts between bevelled surfaces (9, 11) and an outer periphery surface formed on the outer peripheral part.