发明名称 |
Method for forming a barrier metal film with conformal step coverage in a semiconductor integrated circuit |
摘要 |
A method for forming a barrier metal film with conformal step coverage in a semiconductor integrated circuit includes forming a photoresist plug in a barrier metal lined contact or via hole. The barrier metal film has an overhang that narrows the opening to the contact or via hole. The barrier metal film is then etched using a fluorine based plasma etch process to remove the overhang. The photoresist plug is then removed using a oxygen based plasma etch process. The contact or via hole is then filled with tungsten to form a tungsten plug.
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申请公布号 |
US5904561(A) |
申请公布日期 |
1999.05.18 |
申请号 |
US19960777609 |
申请日期 |
1996.12.31 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
TSENG, HORNG-HUEI |
分类号 |
H01L21/768;(IPC1-7):H01L21/28;H01L21/306 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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