发明名称 |
Integrierte Schaltung mit Gate-gesteuerten Leistungshalbleiter-Bauteilen |
摘要 |
In a power integrated device having temperature monitoring circuits powered from input signal pulses, an overtemperature signal is memorized in a small capacitor (30 picofarads) to guarantee that the overtemperature signal will not be lost between two input pulses at a frequency greater than about 16 kHz. A larger charge storage capacitor (100 picofarads) is also added to store the input voltage Vcc needed to power the overtemperature circuits. |
申请公布号 |
DE19702135(C2) |
申请公布日期 |
1999.05.12 |
申请号 |
DE1997102135 |
申请日期 |
1997.01.22 |
申请人 |
INTERNATIONAL RECTIFIER CORP., EL SEGUNDO, CALIF., US |
发明人 |
NADD, BRUNO C., PUYVERT, FR |
分类号 |
H03K17/08;H03K17/082;H03K17/14;(IPC1-7):H01L23/62;H02H7/08 |
主分类号 |
H03K17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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