发明名称 Integrierte Schaltung mit Gate-gesteuerten Leistungshalbleiter-Bauteilen
摘要 In a power integrated device having temperature monitoring circuits powered from input signal pulses, an overtemperature signal is memorized in a small capacitor (30 picofarads) to guarantee that the overtemperature signal will not be lost between two input pulses at a frequency greater than about 16 kHz. A larger charge storage capacitor (100 picofarads) is also added to store the input voltage Vcc needed to power the overtemperature circuits.
申请公布号 DE19702135(C2) 申请公布日期 1999.05.12
申请号 DE1997102135 申请日期 1997.01.22
申请人 INTERNATIONAL RECTIFIER CORP., EL SEGUNDO, CALIF., US 发明人 NADD, BRUNO C., PUYVERT, FR
分类号 H03K17/08;H03K17/082;H03K17/14;(IPC1-7):H01L23/62;H02H7/08 主分类号 H03K17/08
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