REDUNDANCY SIGNATURE FOR SEMICONDUCTOR MEMORY,申请号JP19900188451-传众专利搜索

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发明名称	REDUNDANCY SIGNATURE FOR SEMICONDUCTOR MEMORY
摘要
申请公布号	JPH0474399(A)	申请公布日期	1992.03.09
申请号	JP19900188451	申请日期	1990.07.17
申请人	TOSHIBA CORP;TOUSHIBA MAIKURO EREKUTORONIKUSU KK	发明人	IWASE TAIRA;TAKIZAWA MAKOTO;ISHIGURO SHIGEFUMI;NOBORI KAZUHIKO
分类号	G11C29/00;G11C29/04	主分类号	G11C29/00
代理机构		代理人
主权项
地址

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