Abscheidungsverfahren von Halbleiterschichten auf einem Träger

摘要

The process bombards one face (2) of a substrate (1) with ions (6) to create a layer of gaseous micro-bubbles. This layer is intimately joined with the base substrate (10). The area corresponding to the strip of semiconductor required is illuminated with a light beam sufficient to raise the temperature of the desired strip and ensure its adhesion to the base substrate (10). The base substrate (1) is then separated from the support substrate (10) leaving strips of semiconductor material attached. The ions for bombardment are either hydrogen or rare gases.