| 摘要 |
PROBLEM TO BE SOLVED: To provide to a ferroelectric thin film composition profile which is optimized to enhance electrical performance. SOLUTION: A multilayered ferroelectric thin film contains a nucleating layer 14, a bulk layer 16 and a desired cap layer 18. The thin nucleating layer 14 with a specific composition is realized on a lower electrode 12 for optimizing the ferroelectric crystal orientation, and its required composition is significantly different from the greater part of the ferroelectric thin film. The bulk film 16 utilizes the nucleating layer established as a substrate for its crystal growth. The piling processing having a plurality of steps is executed so as to obtain a desired composition profile. This method is taken into consideration so that a preparation with an optional third composition adjacent to the upper surface of the thin film ensures compatibility with the upper electrode surface and compensates for the mutual action caused by the following processing. |
