发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY
摘要 <p>PROBLEM TO BE SOLVED: To provide a non-volatile memory which can efficiently output the information on whether access of data is possible or not for each of plural built-in banks, to the outside. SOLUTION: A flash memory 1 being this non-volatile semiconductor memory is provided with an input/output buffer 3, a command decoder 5, a bank control circuit 7 four banks, BK0 to BK3, and a condition signal output circuit 9. By such constitution, the condition of each bank is converted to condition signals, ST0 to ST3, by the condition signal output circuit and inputted into an input/ output buffer, which allots the condition signals to data, D0 to D7, to externally output.</p>
申请公布号 JPH11126497(A) 申请公布日期 1999.05.11
申请号 JP19970307997 申请日期 1997.10.22
申请人 OKI ELECTRIC IND CO LTD 发明人 WATANABE KENICHI
分类号 G11C16/06;G06F12/00;G06F12/06;G11C16/10;G11C16/34;(IPC1-7):G11C16/06 主分类号 G11C16/06
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