Semiconductor memory device achieving reduction in access time without increase in power consumption

摘要

Internal power supply voltage Vint is generated from internal high voltage Vpp used for word line driving or the like, using an n channel MOS transistor which operates in a source follower mode. During operation of internal circuitry, gate potential of this source follower transistor is boosted by charge pumping operation of a capacitor. Thus, conductance of the source follower mode transistor can be increased during operation of the internal circuitry without using an internal high voltage generating circuit dedicated to generation of internal power supply voltage.