| 发明名称 |
METHODS AND APPARATUS FOR CLEANING SEMICONDUCTOR SUBSTRATES AFTER POLISHING OF COPPER FILM |
| 摘要 |
A cleaning solution, method, and apparatus for cleaning semiconductor substrates after chemical mechanical polishing of copper films is described. The present invention includes a cleaning solution which combines deionized water, an organic compound, and a fluoride compound in an acidic pH environment for cleaning the surface of a semiconductor substrate after polishing a copper layer. Such methods of cleaning semiconductor substrates after copper CMP alleviate the problems associated with brush loading and surface and subsurface contamination.
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| 申请公布号 |
WO9921220(A1) |
申请公布日期 |
1999.04.29 |
| 申请号 |
WO1998US21073 |
申请日期 |
1998.10.06 |
| 申请人 |
ONTRAK SYSTEMS, INC. |
发明人 |
ZHANG, LIMING;ZHAO, YUEXING;HYMES, DIANE, J.;KRUSELL, WILBUR, C. |
| 分类号 |
C11D1/00;C11D3/02;C11D7/02;C11D7/08;C11D7/26;C11D11/00;C23G1/10;H01L21/02;H01L21/304;H01L21/306;H01L21/308;H01L21/3205;H01L21/321;(IPC1-7):H01L21/321;H01L21/00 |
主分类号 |
C11D1/00 |
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