| 摘要 |
PROBLEM TO BE SOLVED: To obtain the subject composition with negative resistance-temperature characteristics, affording any room temperature resistivity with B-constant kept invariant, by incorporating the main component consisting of a lanthanum- cobalt-based oxide with oxide(s) of Fe and/or Al and at least one oxide of element selected from Si, Zr, Hf, Ta and Sn and the like. SOLUTION: The main component consisting of a lanthanum-cobalt-based oxide shown by the formula Lax CoO3 (0.60<=(x)<=0.99) is incorporated with, as subcomponents, 0.001-30 mol.% (in terms of element) of oxide(s) of Fe and/or Al and 0.001-10 mol.% (in terms of element) of at least one oxide of element selected from the group consisting of Si, Zr, Hf, Ta, Sn, Sb, W, Mo, Te, Ce, Nb, Mn, Th, and P to obtain the objective semiconductor ceramic composition having negative resistance-temperature characteristics. The other objective semiconductor ceramic device is obtained by molding followed by baking the prebaked powder from the above composition to produce a semiconductor ceramic, both principal planes of which is then provided with electrodes. |
