| 摘要 |
PROBLEM TO BE SOLVED: To reduce the deterioration of operating characteristics of a transistor to a minimum, when a gate insulating film is formed by growing a silicon oxide film in plasma at a rate of at most a specific thickness a minute, while the film is in contact with a semiconductor film. SOLUTION: By limiting a reaction gas flowing in a film forming chamber which accommodates a substrate 21, the film forming rate of a silicon oxide film 24 is set to be at most 1,000Å. Thereby an optimum film quality can be obtained as an insulating film for a thin-film transistor. The silicon oxide film 24 formed at the film forming rate of at most 1,000Åand a stopper 26 are in contact with the channel region 25c of a polycrystalline silicon film 25, so that the interfacial condition of an active region and the operation characteristics are improved. The shifted amount of a flat-band voltage is reduced, and the deterioration of transistor characteristics can be prevented. The film is formed dense also, and the withstand voltage of each insulating film can be increased. Thereby reliability and manufacturing yield can be improved.
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