Vertical bipolar transistor

摘要

Vertical bipolar transistor production comprises applying a first insulating layer, a conductive layer (5) and a second insulating layer (6) onto a semiconductor substrate, etching an opening, isotropically etching the first insulating layer to produce a gap and then filling the gap with a contact layer. A vertical bipolar transistor is produced in an active semiconductor substrate zone having a buried collector (2) by: (a) successively applying a first insulating layer, a first conductive layer (5) and a second insulating layer (6) onto the active zone; (b) etching an opening through the second insulating layer (6) and the conductive layer (5); (c) isotropically etching the first insulating layer to produce a gap between the active region surface and the first conductive layer (5); (d) producing the base by implantation in the opening; (e) producing a contact layer which fills the gap and connects the base to the first conductive layer; (f) producing insulating spacers on the opening side walls; (g) producing a second conductive layer (13) as the emitter connection in the remaining opening and producing an emitter connected to the emitter connection in the active region; and (h) producing a connection for the buried collector. An Independent claim is also included for a vertical bipolar transistor produced by the above process.