| 发明名称 |
PROCESS OF PRODUCTION OF THIN-FILM DIELECTRIC OF ALUMINUM DIOXIDE FOR MANUFACTURE OF METAL-DIELECTRIC-SEMICONDUCTOR DEVICES |
| 摘要 |
FIELD: manufacture of metal-dielectric-semiconductor devices. SUBSTANCE: thin-film dielectric of aluminum dioxide is formed on surface of substrate at temperature of 180-400 C by deposition from gas phase due to reaction between aluminum chloride, oxygen and nitrogen oxide. EFFECT: increased efficiency of process.
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| 申请公布号 |
RU2129094(C1) |
申请公布日期 |
1999.04.20 |
| 申请号 |
RU19950113257 |
申请日期 |
1995.07.26 |
| 申请人 |
DAGESTANSKIJ GOSUDARSTVENNYJ TEKHNICHESKIJ UNIVERS |
发明人 |
SARKAROV T.EH.;ADAMOV A.P.;KHASPULATOV KH.A. |
| 分类号 |
C01F7/02;C23C18/12;(IPC1-7):C01F7/02 |
主分类号 |
C01F7/02 |
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