HETEROJUNCTION BIPOLAR TRANSISTOR HAVING WIDE BANDGAP, LOW INTERDIFFUSION BASE-EMITTER JUNCTION

摘要

A heterojunction bipolar transistor (20) is provided with a silicon (Si) base region (34) that forms a semiconductor junction with a multilayer emitter (38) having a thin gallium arsenide (GaAs) emitter layer (36) proximate the base region (34) and a distal gallium phosphide emitter layer (40). The GaAs emitter layer (36) is sufficiently thin, preferably less than 200 ANGSTROM , so as to be coherently strained.