发明名称 Small semiconductor chips are separated from a wafer
摘要 Semiconductor chips (1) are separated from a wafer (2) by dry etching completely through the wafer in the region of the chip edges. Preferred Features: Dry etching is carried out by reactive ion etching (RIE), electron cyclotron resonance (ECR) etching or etching with an inductively coupled plasma (ICP) source, using an etchant comprising a mixture of a Lewis acid and chlorine.
申请公布号 DE19743349(A1) 申请公布日期 1999.04.08
申请号 DE1997143349 申请日期 1997.09.30
申请人 SIEMENS AG, 80333 MUENCHEN, DE 发明人 SCHOENFELD, OLAF, DR., 93053 REGENSBURG, DE;FRANZ, GERHARD, DR., 81543 MUENCHEN, DE
分类号 H01L21/301;H01L21/306;H01L21/78 主分类号 H01L21/301
代理机构 代理人
主权项
地址