Edge structure for semiconductor component e.g. diode

摘要

The edge structure has at least two electrodes (A,K) lying opposite each other on two opposing sides of a semiconductor body (1,2). At least on pn transition (3,2) is provided in a middle region of the semiconductor component surrounded by the edge region and between the two electrodes. The structure also has an insulating layer (6) or a junction termination zone which extends between the middle region and the edge region from a side of the semiconductor body towards the other side, to a depth in the region of the charge carrier diffusion length. Field rings (4,5) may be provided in the edge region. Alternatively a zone with lateral variation in the doping may be provided in the edge region. Alternatively a weakly doped zone e.g. of silicon oxide or silicon nitride may be provided in the edge region.