| 摘要 |
<p>The dopant ion implanting process which is performed for forming a source area (S) and a drain area (D) is divided into two stages. In the first stage, dopant ions are implanted one time for forming p-n junctions between the source and drain areas (S and D) and a well area (3). In the second stage, a large amount of dopant ions are implanted one time to a shallow depth at which the ions do not affect the p-n junctions between the source and rain areas (S and D) and the well area (3). When the surfaces of the source and drain areas (S and D) are silicified (12) after performing dopant activating heat treatment, the resistances in the source and drain areas (S and D) and the leakage from the p-n junctions can be reduced.</p> |
