发明名称 |
FERROELECTRIC MEMORY |
摘要 |
A ferroelectric nonvolatile semiconductor memory using a ferroelectric film as a dielectric film between a floating gate and a control gate, wherein a write switching transistor is provided between the floating gate and the bit line so as to enable the application of any voltage to the ferroelectric film using the voltage applied to the control gate and the voltage applied to the bit line and thereby enabling writing by a low voltage. |
申请公布号 |
KR0172670(B1) |
申请公布日期 |
1999.03.30 |
申请号 |
KR19960039028 |
申请日期 |
1996.09.09 |
申请人 |
SONY CORPORATION |
发明人 |
NAIKI, IHACHI;SUGIYAMA, TOSHINOBU |
分类号 |
B65B25/04;G11C11/22;H01L27/115;H01L29/78;(IPC1-7):G11C11/22 |
主分类号 |
B65B25/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|