| 摘要 |
<p>PROBLEM TO BE SOLVED: To form a polycrystalline film used for a TFT having high electron movabiltity by a method, wherein a deposited film using a part of transient metal out of an amorphous film annealed for the formation of the transient metallic semiconductor once annealed is further rapid by thermally annealed. SOLUTION: An amorphous layer is deposited on a transparent substrate 4 via the intermediary of an intervening barrier layer 5, further depositing a transient metallic film on the amorphous layer. Next, the part of the amorphous film underneath the transient metal film is used for the formation of a transient metallic compound 7. Next, after a first annealing step, the unreacted transient metallic film is removed. The amorphous film is converted into a polycrystalline film 8 by a second rapid thermal annealing step. At this time, nickel is adopted for the formation of the polycrystalline in the second annealing step. In such a constitution, the transient metal is contained in the second annealing process, so that the rapid crystallization is accelerated along the one directional growing front.</p> |
