Trench transistor with localized source/drain regions implanted through selectively grown oxide layer

摘要

A method of forming an IGFET includes forming a trench with opposing sidewalls and a bottom surface in a substrate, selectively growing an oxide layer on the bottom surface so that the oxide layer includes a thick region between thin regions, implanting localized source and drain regions through the thin regions using the thick region as an implant mask, stripping the oxide layer, forming a gate insulator and gate electrode in the trench, and forming a source and drain in the substrate that include the localized source and drain regions adjacent to the bottom surface of the trench. The localized source and drain regions provide accurately positioned channel junctions beneath the trench. Furthermore, the locations and dopant concentrations of the localized source and drain regions are controlled by the dimensions of the selectively grown oxide layer.