| 摘要 |
PROBLEM TO BE SOLVED: To form a pattern, wherein space and line near a design rule is 1:1 at a memory cell part and to form a pattern equal to or less than the design rule at a random logic circuit part, in a semiconductor device where a memory cell and random logic circuit are placed in mixture. SOLUTION: Films 6 and 8 to be patterned are formed on a semiconductor substrate 2, and on the film a silicon nitride film is formed. The silicon nitride film is patterned to form a mask pattern 10b, further, a protective film which covers a part of the mask pattern 10b so as not to be etched is formed. Such a mask pattern 10b without protective film is etched isotropically to form a mask pattern 10c of a specified dimension. After removing the protective film, the films 6 and 8 to be patterned are etched with the mask patterns 10b and 10c as a mask. |
