| 摘要 |
PROBLEM TO BE SOLVED: To obtain a device free from the generation of defects in deposited film even in the case long time continuos film formation is executed, furthermore free from the generation of troubles caused by the clogging of fine powder in a vaccum exhaust system and capable of the formation of deposited film of high quality by arranging a louver-shaped member in a plasma discharge space or in the vicinity of the discharge space in a vacuum vessel. SOLUTION: Into a plasma discharge space 109 in a plasma CVD chamber 104 in which a band-shaped substrate 101 is carried-in and out via a gas gate 107, a gaseous starting material is introduced from a feed tube 110, and exhaust is executed through a gas exhaust tube 111. High frequency electric power is charged from a discharge electrode 112 to form deposited film on a substrate 101. In this case, a louver-shaped member 115 increasing the contact area with an exhaust gas is arranged in the vicinity of an exhaust port 114 from the space 109, which is heated by a heater 116 at the time of coating formation, is positively brought into contact with a member obtd. by heating the powdery product components of the exhaust gas and is depositd and adhered thereto as coating hard to scatter to prevent the arrival of the powdery product components to the exhaust system of the poststage. |
