| 摘要 |
A transparent electrical conductor (20, 28) which provides relatively high electrical conductivity and transmittance in the visible/near-infrared (VNIR), relative to known transparent electrical conductors, such as tin-doped indium oxide (ITO). In one embodiment of the invention, the transparent electrical conductor 20 is formed from a plurality of quantum wells (22) formed between the interfaces of three layers of lattice-matched, wide band gap materials, such as AlGaN and GaN. In an alternative embodiment of the invention, a material (30) with a band gap much larger than known materials used for such transparent electrical conductors, such as ITO, is selected. Both embodiments of the invention may be formed on a transparent substrate (26, 32) and provide relatively better transmittance in the VNIR as well as relatively lower sheet electrical resistances of four or less ohms/square than known materials, such as tin-doped indium oxide (ITO). <IMAGE> |
