Integrated schottky diode and mosgated device

摘要

A power MOS gated device having a polygonal cell structure is formed together with a Schottky diode in a common silicon substrate. The source contact metal of each polygonal cell also contacts the silicon substrate at the center of the cell to form the Schottky contact of the fast recovery Schottky diode. A notch is also formed in the top surface of the substrate through the source region, and the source contact metal fills the notch.