Verfahren zur Herstellung einer amorphen Halbleiterschicht

摘要

A method for forming an amorphous semiconductor film which comprises (a) a film-forming step of forming a semiconductor film having not more that 20 atomic percent of bound hydrogen to a thickness of 3 to 1000 ANGSTROM , and (b) a modifying step of modifying the formed film, the steps being repeated multiple times. The modifying step may involve exposure to discharge atmosphere contained a non-film-forming reactive gas, or to a monovalent ion, or to atomic hydrogen to improve the properties of the semiconductor film. For a halogenated silicon film, modification may involve dehalogenation-hydrogenation.