| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a high-density, uniform and high- grade silicon carbide sintered compact free from pores generated, and useful in various fields including the semiconductor industry and electronic information equipment industry, without the need of any special feedstocks. SOLUTION: This method includes a process of sintering a mixture of silicon carbide powder and a nonmetallic sintering auxiliary; wherein prior to sintering the mixture, it is preliminarily baked at >900 deg.C but <=1,500 deg.C, and the final sintered compact is >=2.9 g/cm<3> in density; in the preliminarily baking process, it is preferable that the rate of temperature rise is <=5 deg.C/min and the process is carried out in a vacuum or non-oxidative atmosphere such as inert gas atmosphere. |
