发明名称 PATTERN FORMING METHOD
摘要 PROBLEM TO BE SOLVED: To accelerate the elimination reaction of acetal and to stably form a pattern. SOLUTION: In this method, a chemically amplifying positive resist material is applied on a substrate, and if necessary, the resist is prebaked, and then exposed, subjected to post exposure baking, and developed with an alkali soln. to form a positive pattern on the substrate. The positive resist material contains a base resin which has groups unstable with an acid and changes into alkali- soluble when the groups unstable with an acid leave with an acid, an acid producing agent which produces an acid by irradiation of light or radiation, a basic compd., and an org. solvent which dissolves these components. In this method, the post exposure baking is, carried out on a hot plate at 70 to 140 deg.C for 30 to 200 sec in an environment of >=30% relative humidity at 15 to 30 deg.C.
申请公布号 JPH1172928(A) 申请公布日期 1999.03.16
申请号 JP19980186952 申请日期 1998.06.17
申请人 SHIN ETSU CHEM CO LTD 发明人 HATAKEYAMA JUN;TAKEMURA KATSUYA;NAGURA SHIGEHIRO
分类号 G03F7/004;G03F7/039;G03F7/38;H01L21/027;(IPC1-7):G03F7/38 主分类号 G03F7/004
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