| 摘要 |
<p>PROBLEM TO BE SOLVED: To make a depth of focus of an isolated line pattern equal to or wider than one to one line and space pattern by setting the ratio of the line pattern of a periodic pattern and a line width of a space pattern within a specific range at the first exposure in the method of double exposure. SOLUTION: In an exposure process of a second mask pattern comprising a periodic pattern with different period from a periodic pattern, the ratio of the line and space of the periodic pattern included in a first mask pattern is set within a range of one to one through one to four. A pattern of a shading film 102 comprising chrome is placed at the corresponding position to leave only the second, fourth, and seventh line pattern from the left. The size of the shading film 102 of the mask for the second exposure is made larger than the shading film of the first exposure to shade the non-exposed section at the first exposure and a line width L2 of the shading film 102 is set to be 0.35μm.</p> |
