发明名称 ELECTROSTATIC ATTRACTION DEVICE AND ELECTRON BEAM PLOTTING APPARATUS USING IT
摘要 <p>PROBLEM TO BE SOLVED: To obtain an electrostatic attraction device, by which an attraction defect and a grounding defect can be detected precisely, when a sample is attracted and held by an electrostatic force. SOLUTION: In an electrostatic attraction device, a sample (a wafer) 1 is placed on a dielectric 2. When a DC voltage 4 is applied to a grounding electrode 7 at the sample 1 and an electrode 3 on the side of the dielectric 2, an electrostatic force is generated to the sample 1 and the dielectric 2, and the sample 1 is attracted onto the dielectric 2 by the electrostatic force. When the DC voltage 4 is applied, another electrode 8 which comes into contact with the sample 1 is connected to a resistance measuring circuit 9, a resistance of the electrode 8 and the electrode 7 is measured, and the grounding state of the sample 1 is judged. After that, the electrode 8 is connected to the side of a potential measuring circuit 10, and a surface potential on the sample 1 is measured when a DC voltage 13 is applied. Thereby, the grounding state of the sample 1 and the potential are checked.</p>
申请公布号 JPH1167884(A) 申请公布日期 1999.03.09
申请号 JP19970226061 申请日期 1997.08.22
申请人 HITACHI LTD 发明人 MATSUSHIMA MASARU;TSUNODA MASAHIRO;SATO SEISHIRO;IKEDA KAZUNORI;FUKUSHIMA YOSHIMASA
分类号 G03F7/20;B23Q3/15;H01L21/027;H01L21/68;H01L21/683;H02N13/00;(IPC1-7):H01L21/68 主分类号 G03F7/20
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