Capacitor production in a transistor-containing semiconductor component especially a DRAM

摘要

A capacitor is produced in a semiconductor component comprising a semiconductor substrate provided with a transistor by (a) producing a via plug electrically connected to an impurity region of the transistor; (b) producing a Si-H bonding layer on the plug surface; (c) removing H ions from the bonding layer to form a SiOx layer; and (d) producing an electrode above the plug. Independent claims are also included for similar processes involving carrying out, prior to step (a), a step of forming and selectively removing an insulating layer to form a via exposing a transistor impurity region, optionally before and after forming a bit line on the insulating layer including the via. Preferred Feature: The Si-H bonding layer is produced by dipping the substrate in an aqueous HF solution and the H ions are removed by heat treatment at 420-600 deg C and less than 10<-6> Torr.