RESIST RESIN, RESIST RESIN COMPOSITION, AND PROCESS FOR PATTERNING THEREWITH

摘要

A resist resin containing a copolymer having a (meth)acrylic structure having a side chain group decomposable with an acid and a polyorganosilsequioxane structure of general formula (1) in the same molecule, or a mixture of polymers having these structures in different molecules, and a process for patterning with the resist resin wherein the symbols are as defined in the description. This resist resin has a high sensitivity to a radiation having a short wavelength of 220 nm or below and is capable of forming a fine parttern of the order of 0.15 mu m or below.