发明名称 Reference circuit
摘要 <p>A reference circuit (200') has bipolar transistors (216, 226) providing a voltage difference DELTA V of base-emitter voltages ¦ VBE ¦ and has resistors (210/R1, 220/R2) for adding a current IR1 resulting from DELTA V and a current IR2 resulting from of base-emitter voltage ¦ VBE ¦ of one bipolar transistor (216 or 226) so that a resulting temperature coefficient TCTOTAL of said currents IR1 and IR2 is compensated. The circuit (200') has voltage transfer units (260, 270) which transfer DELTA V to the resistors (210/R1, 220/R2) so that the resistors (210/R1, 220/R2) do not substantially load the bipolar transistors (216, 226). The voltage transfer units (260, 270) have input stages with n-channel FETs. A control unit (241) which is coupled to the bipolar transistors (216, 226) adjusts input voltages ( ¦ VCE ¦ ) at the voltage transfer units (260, 270) to temperature changes, so that the n-channel FETs operate in an active region. The control unit (241) has a voltage source (290) providing a voltage VDS REF which is similary temperature and process depending as a drain-source voltage of the n-FETs. <IMAGE></p>
申请公布号 EP0898215(A2) 申请公布日期 1999.02.24
申请号 EP19980111716 申请日期 1998.06.25
申请人 MOTOROLA, INC. 发明人 KOIFMAN, VLADIMIR;AFEK, YACHIN
分类号 G05F3/02;G05F3/26;G05F3/30;(IPC1-7):G05F3/30 主分类号 G05F3/02
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