| 摘要 |
PROBLEM TO BE SOLVED: To improve the increase rate of the surface area on a film formed on a wafer. SOLUTION: The method is to grow hemispherical or mushroom-like fine crystal grains on the surface of a silicon film by an annealing processing. When the fine crystal grains are formed to desired sizes, gas for inhibiting the surface migration of silicon atoms is added and grain growth is simultaneously stopped. Thus, the size and the form of a fine crystal nucleus on the surface of the silicon film can be controlled and the grains of forms optimum for the device are obtained. |
