| 摘要 |
PROBLEM TO BE SOLVED: To dispense with a high-temperature heat treatment and to obtain an electrode which comes into ohmic contact with an n-type nitride compound semiconductor by a method, wherein an aluminum layer is provided in the n-type nitride compound semiconductor, and a gold layer is laminated thereon through the intermediary of a silicon layer or a nickel layer. SOLUTION: An n-type GaN film 2 is formed on a sapphire substrate 1, and an electrode 15 of multilayered film is formed. Four kinds of the n-type electrodes 15 of multilayered film are formed through an electron beam vapor deposition method at a room temperature. First, aluminum is vapor deposited on the n-type GaN film 2, and then gold is laminated, and second, aluminum is vapor deposited on the n-type GaN film 2. The silicon is provided, and then gold is laminated, and third aluminum is vapor deposited on the n-type GaN film 2. Nickel is provided thereon, then gold is laminated thereon, and fourth aluminum is vapor deposited on the n-type GaN film 2, silicon and nickel are successively laminated, and then gold is laminated thereon. Through this setup, an electrode coming into ohmic contact with a gallium nitride semiconductor can be obtained which dispenses with a high-temperature heat treatment. |
