| 摘要 |
On a silicon substrate (1) is formed a MOS transistor which comprises a gate oxide film (3), a polysilicon gate electrode (4), an LDD diffusion layer (5) and a source/drain diffusion layer (7). A Ti film (8) is formed over the entire surface of the MOS transistor, the surface areas of the source/drain diffusion layer (7) and the polysilicon gate electrode (4) are silicified to form Ti silicide film (9, 10). Thereafter, W or Ta is ion-implanted as an alloy forming material into Ti silicide (10), and an anneal treatment is performed to react doped W or Ta with Ti silicide (10) and form TiWxSiy or TiTaxSiy (11).
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