| 发明名称 |
Process for producing semiconductor substrate by heating to flatten an unpolished surface |
| 摘要 |
A process for producing a semiconductor substrate comprises heat-treating a substrate having a monocrystal thereon in a reducing atmosphere.
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| 申请公布号 |
US5869387(A) |
申请公布日期 |
1999.02.09 |
| 申请号 |
US19950402975 |
申请日期 |
1995.03.13 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SATO, NOBUHIKO;YONEHARA, TAKAO;SAKAGUCHI, KIYOFUMI |
| 分类号 |
C30B33/00;H01L21/20;H01L21/306;H01L21/3105;H01L21/324;H01L21/762;H01L31/18;(IPC1-7):H01L21/306 |
主分类号 |
C30B33/00 |
| 代理机构 |
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代理人 |
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