发明名称 |
Method for increasing utilizable surface of rugged polysilicon layer in semiconductor device |
摘要 |
The present invention is related to a method for increasing utilzable surface area of a rugged polysilicon layer in a semiconductor device. The present method includes steps of: (a) providing a pre-grown rugged polysilicon layer which is composed of polysilicon with first dopants doped therein; (b) forming another polyslicon layer on the pre-grown rugged polysilicon layer; (c) removing a portion of the another polysilicon layer by an anisotropic etching process to expose an upper surface of the pre-grown rugged polysilicon layer; and (d) etching the resulting pre-grown rugged polysilicon layer which an etching selectivity ratio of the pre-grown rugged polysilicon layer to the another polysilicon layer being greater than one, to obtain the rugged polysilicon layer having increasing utilizable surface area. A semiconductor device containing the rugged polysilicon layer created according to the present invention can work well in a relatively dense and small semiconductor chip.
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申请公布号 |
US5869399(A) |
申请公布日期 |
1999.02.09 |
申请号 |
US19970908319 |
申请日期 |
1997.08.07 |
申请人 |
MOSEL VITELIC INC. |
发明人 |
TU, TUBY;CHEN, KUANG-CHAO |
分类号 |
H01L21/02;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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