| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor element having a dome-like structure and an improved integration degree to enable increase in electrostatic capacity, and a method for manufacturing the same. SOLUTION: A gate oxide layer 23 is formed on a semiconductor substrate 21 having a protrusion 21a, and a gate electrode 25 in the form of a sidewall spacer of a polysilicon layer is formed on the gate oxide layer 23. A drain 21c is formed in the semiconductor substrate 21 on the outer side of the gate electrode 25, and an insulating layer on the drain 21c is etched to form a contact hole 28 and insulating layer patterns 26a, 26b. In addition, a polysilicon layer is formed on the contact hole 28 and the insulating layer patterns 26a, 26b, and is patterned to form a node electrode 29a. An interlayer insulating layer 30 of a dielectric substance is formed on the node electrode 29a and the insulating layer pattern 26b, and a plate electrode 31 and an insulating layer 32 are sequentially formed on the interlayer insulating layer 30. Then, a contact hole 34 is formed by etching on the upper surface of the protrusion 21a. A sidewall spacer 35 is formed on the sidewall of the contact hole 34 and is patterned. Then, a bit line 36 is formed. |
