Halbleiterspeicher mit nicht-flüchtigen Zwei-Transistor-Speicherzellen

摘要

The invention relates to a semiconductor memory, especially with non-volatile dual transistor memory cells, comprising an N-channel selection transistor and an N-channel memory transistor, wherein a trigger circuit with a transfer transistor is also provided and is also the object of the invention. The transfer transistor in the inventive seminconductor is embodied as a P-channel transfer transistor, wherein a transfer channel connection is linked to a row circuit leading to the memory cell. This enables the voltages required for programming to be obtained with little technological effort.