发明名称 |
Method for forming vias in multi-level integrated circuits, for use with multi-level metallizations |
摘要 |
A process has been developed that allows reliable fabrication of vias, used for multi-level wiring purposes. The process features the use of a metallization structure, overlying a pillar structure in a specific area, resulting in a raised and extended metal surface, in areas of overlap. The raised and extended metal surface is used for subsequent via contact. Spin on glass processes are also employed to fill narrow spaces between metal structures.
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申请公布号 |
US5861673(A) |
申请公布日期 |
1999.01.19 |
申请号 |
US19970787894 |
申请日期 |
1997.01.23 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
YOO, CHUE-SAN;LEE, JIN-YUAN |
分类号 |
H01L21/768;H01L23/522;(IPC1-7):H01L29/41 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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