发明名称 METHOD AND EQUIPMENT FOR PLASMA CVD
摘要 PROBLEM TO BE SOLVED: To inhibit thermal deformation by sufficiently cooling a substrate, to prevent abnormal electric discharge, and to form a CVD film without interfering with film formation at the time of performing film formation by means of plasma CVD. SOLUTION: A thin metallic film is formed on a long-sized non-magnetic substrate. Then, a thin film is formed by means of plasma CVD on the thin metallic film while allowing the non-magnetic substrate to travel continuously along a cooling can. At this time, as the cooling can, the one prepared by forming an insulating layer 15 composed of ceramics to 0.3-1.0 mm on the whole surface of the outside peripheral surface of a metallic can 12 is used.
申请公布号 JPH116071(A) 申请公布日期 1999.01.12
申请号 JP19970155420 申请日期 1997.06.12
申请人 SONY CORP 发明人 KIN YASUNORI
分类号 C23C16/44;C23C16/50;G11B5/84;H01J37/32;H05H1/24 主分类号 C23C16/44
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