| 摘要 |
PROBLEM TO BE SOLVED: To remove the squeezed-out part of the bonding agent on the part where it can not be removed through polishing by a method wherein, after two semiconductor wafers have been adhered by a bonding agent, the bonding agent which is squeezed out from the adhesion surface is removed by an etchant which dissolves the bonding agent. SOLUTION: After an upper semiconductor wafer 1 and a lower semiconductor wafer 2 have been adhered by a bonding agent, the squeezed-out part 5 of the bonding agent is chemically removed, by dipping the semiconductor wafers 1 and 2 into the etchant which dissolves the bonding agent. In the ordinary bonding process of semiconductor wafer, the gas between semiconductor wafers after bonding is about 10 to 20μm, and therefore, it takes a long time before the etchant infiltrated into the bonded part 4 of microscopic gaps in removed. Accordingly, even if the adhered upper and lower semiconductor wafers 1 and 2 are dipped into the etchant for a short time, the bonded part 4 is not removed at all, and only the squeezed-out part 5 in removed.
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